Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4

GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M.

dc.contributor.author	GRZECHNIK, A.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	SYASSEN, K.
dc.contributor.author	LOA, I.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	HANFLAND, M.
dc.date.accessioned	2020-11-10T12:56:23Z
dc.date.available	2020-11-10T12:56:23Z
dc.date.issued	2001
dc.identifier.citation	GRZECHNIK, A., URSAKI, V. V., SYASSEN, K. et al. Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4. In: Journal of Solid State Chemistry, 2001, V. 160, Nr. 1, pp. 205-211. ISSN 0022-4596.	en_US
dc.identifier.uri	https://doi.org/10.1006/jssc.2001.9224
dc.identifier.uri	http://repository.utm.md/handle/5014/11293
dc.description	Access full text - https://doi.org/10.1006/jssc.2001.9224	en_US
dc.description.abstract	The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity measurements in a diamond anvil cell at room temperature. At 21 GPa an order–disorder phase transition to the rock-salt structure (F43m, Z=4) occurs. Upon decompression, the metallic NaCl-type polymorph transforms into zinc-blende (Fm3m, Z=4) at pressures of 7.5–4 GPa. The recovered metastable semiconducting material is of the zinc-blende type.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconducting cadmium thiogallate	en_US
dc.subject	semiconducting materials	en_US
dc.subject	chalcopyrites	en_US
dc.title	Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4	en_US
dc.type	Article	en_US