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Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor

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dc.contributor.author SPRINCEAN, Veaceslav
dc.contributor.author LUPAN, Oleg
dc.contributor.author CARAMAN, Iuliana
dc.contributor.author UNTILA, Dumitru
dc.contributor.author POSTICA, Vasile
dc.contributor.author COJOCARU, Ala
dc.contributor.author GAPEEVA, Anna
dc.contributor.author PALACHI, Leonid
dc.contributor.author ADELING, Rainer
dc.contributor.author TIGINYANU, Ion
dc.contributor.author CARAMAN, Mihail
dc.date.accessioned 2020-11-09T13:43:20Z
dc.date.available 2020-11-09T13:43:20Z
dc.date.issued 2021
dc.identifier.citation SPRINCEAN, Veaceslav, LUPAN, Oleg, CARAMAN, Iuliana et al. Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor. In: Materials Science in Semiconductor Processing, 2021, V. 121, pp. 105314. ISSN 1369-8001. en_US
dc.identifier.uri https://doi.org/10.1016/j.mssp.2020.105314
dc.identifier.uri http://repository.utm.md/handle/5014/11249
dc.description Access full text - https://doi.org/10.1016/j.mssp.2020.105314 en_US
dc.description.abstract In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The results show that the properties of obtained β-Ga2O3–β-Ga2S3 composites were strongly influenced by the thermal annealing temperature. The XRD and Raman analyses confirmed the high crystalline quality of the formed β-Ga2O3 nanostructures. The absorption edge of the oxide is due to direct optical transitions. The optical bandwidth was estimated to be approximately 4.34-4.41 eV, depending on the annealing temperature. Annealing of the β-Ga2S3 monocrystals at a higher temperature of 1170 K showed the complete conversion of the surface to β-Ga2O3. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.subject nanostructures en_US
dc.subject gallium oxide en_US
dc.subject semiconductors en_US
dc.subject scanning electron microscopy en_US
dc.title Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor en_US
dc.type Article en_US


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