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Atomically thin semiconducting layers and nanomembranes: a review

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dc.contributor.author DRAGOMAN, Mircea
dc.contributor.author DRAGOMAN, Daniela
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2020-10-21T07:10:53Z
dc.date.available 2020-10-21T07:10:53Z
dc.date.issued 2017
dc.identifier.citation DRAGOMAN, Mircea, DRAGOMAN, Daniela, TIGINYANU, Ion. Atomically thin semiconducting layers and nanomembranes: a review. In: Physica Status Solidi (a). 2017, V. 32, Nr. 3, pp. 033001. ISSN ‎0268-1242 (print) 1361-6641 (web). en_US
dc.identifier.uri https://doi.org/10.1088/1361-6641/aa5206
dc.identifier.uri http://repository.utm.md/handle/5014/10852
dc.description Access full text - https://doi.org/10.1088/1361-6641/aa5206 en_US
dc.description.abstract This article reviews the main physical properties of atomically thin semiconductors and the electronic devices based on them. We start with graphene, describing its physical properties and growth methods, followed by a discussion of its electronic device applications. Then, transition metal dichalcogenides (TMDs) are analyzed as a prototype of atomically thin semiconductors, their physical properties, growth methods, and electronic devices are discussed in detail. Finally, non-layered semiconducting membranes with thicknesses ranging from a few nanometers to about 50 nm, and considered as counterparts of atomically thin semiconductors, are analyzed, and their applications presented. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin semiconductors en_US
dc.subject semiconductors en_US
dc.subject electronic devices en_US
dc.subject graphenes en_US
dc.subject metal dichalcogenides en_US
dc.subject dichalcogenides en_US
dc.subject semiconducting membranes en_US
dc.subject membranes en_US
dc.title Atomically thin semiconducting layers and nanomembranes: a review en_US
dc.type Article en_US


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