Porous II-VI vs. porous III-V semiconductors

LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H.

dc.contributor.author	LANGA, S.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	MONAICO, E.
dc.contributor.author	FÖLL, H.
dc.date.accessioned	2020-10-20T10:54:08Z
dc.date.available	2020-10-20T10:54:08Z
dc.date.issued	2011
dc.identifier.citation	LANGA, S., TIGINYANU, I. M., MONAICO, E. et al. Porous II-VI vs. porous III-V semiconductors. In: Physica Status Solidi (c). 2011, V. 8, Nr. 6, pp. 1792-1796. ISSN 1862-6351 (print) 1610-1642 (web).	en_US
dc.identifier.uri	https://doi.org/10.1002/pssc.201000102
dc.identifier.uri	http://repository.utm.md/handle/5014/10844
dc.description	Access full text - https://doi.org/10.1002/pssc.201000102	en_US
dc.description.abstract	In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors current-line and crystallographically oriented pores can be grown, whereas in II-VI semiconductors only current line oriented pores can form. The lack of crystallographically oriented pores in II-VI is a possible reason why no long range order for the current line oriented pores was observed in these materials up to now.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous structures	en_US
dc.subject	electrochemical etching	en_US
dc.subject	semiconductors	en_US
dc.subject	pores	en_US
dc.title	Porous II-VI vs. porous III-V semiconductors	en_US
dc.type	Article	en_US