Engineering porous III-Vs

FÖLL, H.; LANGA, S.; CARSTENSEN, J.; LÖLKES, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M

dc.contributor.author	FÖLL, H.
dc.contributor.author	LANGA, S.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	LÖLKES, S.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	TIGINYANU, I. M
dc.date.accessioned	2020-10-20T06:34:45Z
dc.date.available	2020-10-20T06:34:45Z
dc.date.issued	2003
dc.identifier.citation	FÖLL, H., LANGA, S., CARSTENSEN, J. et al. Engineering porous III-Vs. In: III-Vs Review. 2003, V. 16, Nr. 7, pp. 42-43. ISSN 0961-1290.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0961-1290(03)00993-1
dc.identifier.uri	http://repository.utm.md/handle/5014/10818
dc.description	Access full text - https://doi.org/10.1016/S0961-1290(03)00993-1	en_US
dc.description.abstract	Porous semiconductors exhibit new and unexpected properties compared to the bulk materials. In III-Vs, many, many new features with respect to optical properties have emerged during the last few years for certain pore morphologies. While pore etching is a complicated process, only poorly understood at present, it has a definite potential to produce materials with engineered properties.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	pore etching	en_US
dc.title	Engineering porous III-Vs	en_US
dc.type	Article	en_US