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Nanoperforated and Continuous Ultra-Thin GaN Membranes

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dc.contributor.author TIGINYANU, I. M.
dc.contributor.author POPA, V.
dc.contributor.author STEVENS-KALCEFF, M. A.
dc.date.accessioned 2020-10-19T13:34:26Z
dc.date.available 2020-10-19T13:34:26Z
dc.date.issued 2011
dc.identifier.citation TIGINYANU, I. M., POPA, V. STEVENS-KALCEFF, M. A. Nanoperforated and Continuous Ultra-Thin GaN Membranes. In: Electrochemical and Solid-State Letters. 2011, V. 14, Nr. 9, pp. K51. ISSN 1099-0062. en_US
dc.identifier.uri https://doi.org/10.1149/1.3603846
dc.identifier.uri http://repository.utm.md/handle/5014/10809
dc.description.abstract We report on fabrication of ultra-thin GaN membranes of nanometer scale thickness, by using the concept of surface charge lithography based on low-energy ion treatment of the sample surface with subsequent photoelectrochemical etching. Both nanoperforated and continuous membranes have been fabricated depending on the energy and dose of the ions. These membranes are transparent to UV radiation, emit mainly yellow cathodoluminescence and exhibit electrical conductivity. Successful fabrication of nanometer-thin membranes opens unique possibilities for exploration of two dimensional GaN-based structures predicted to be ferromagnetic with half-metallic or metallic configuration which is of peculiar importance for spintronics applications. en_US
dc.language.iso en en_US
dc.publisher The Electrochemical Society en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject ultra-thin membranes en_US
dc.subject membranes en_US
dc.subject spintronics en_US
dc.title Nanoperforated and Continuous Ultra-Thin GaN Membranes en_US
dc.type Article en_US


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