GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology

Abstract

This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects of SiNx-surface passivation and reactive ion etching (RIE) as required to define the micrometre-size Schottky contacts are investigated using photoluminescence (PL) spectroscopy and electrical characterization of the fabricated Schottky diodes. The perspective of Pt/n-GaN Schottky varactor diodes for high-frequency multipliers is estimated on the basis of dc parameters measured for a structure with a 5 µm electrode diameter.