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Use of porous GaAs electrodes in photoelectrochemical cells

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dc.contributor.author COJOCARU, A.
dc.contributor.author SIMASHKEVICH, A.
dc.contributor.author SHERBAN, D.
dc.contributor.author TIGINYANU, I.
dc.contributor.author URSAKI, V.
dc.contributor.author TSIULYANU, I.
dc.contributor.author USATYI, I.
dc.date.accessioned 2020-10-16T07:47:45Z
dc.date.available 2020-10-16T07:47:45Z
dc.date.issued 2005
dc.identifier.citation COJOCARU, A., SIMASHKEVICH, A., SHERBAN, D. et al. Use of porous GaAs electrodes in photoelectrochemical cells. In: Physica Status Solidi (a). 2005, V. 202, Nr. 8, pp. 1678-1682. ISSN ‎1862-6319. en_US
dc.identifier.uri https://doi.org/10.1002/pssa.200461223
dc.identifier.uri http://repository.utm.md/handle/5014/10738
dc.description Access full text - https://doi.org/10.1002/pssa.200461223 en_US
dc.description.abstract The photoelectrochemical properties of semiconductor-electrolyte solar cells with carbon auxiliary electrode and colloidal aqueous solution of Na2SiO3 have been investigated. Bulk n-type single crystalline and nanoporous GaAs material were used as semiconductor electrodes. Current–voltage characteristics under different illumination intensities and spectral distribution of the photosensitivity were studied. The photopotential was found to reach values as high as 0.46 V for bulk n-GaAs. The introduction of porosity in GaAs shifts the maximum of the spectral distribution of photosensitivity towards the longwavelength region and increases the short circuit current by a factor of two. en_US
dc.language.iso en en_US
dc.publisher WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject solar cells en_US
dc.subject semiconductors en_US
dc.subject semiconductor electrodes en_US
dc.title Use of porous GaAs electrodes in photoelectrochemical cells en_US
dc.type Article en_US


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