Porosity-induced gain of luminescence in CdSe

MONAICO, E.; URSAKI, V. V.; URBIETA, A.; FERNÁNDEZ, P.; PIQUERAS, J.; BOYD, R. W.; TIGINYANU, I. M.

dc.contributor.author	MONAICO, E.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	URBIETA, A.
dc.contributor.author	FERNÁNDEZ, P.
dc.contributor.author	PIQUERAS, J.
dc.contributor.author	BOYD, R. W.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-10-12T12:10:55Z
dc.date.available	2020-10-12T12:10:55Z
dc.date.issued	2004
dc.identifier.citation	MONAICO, E., URSAKI, V. V., URBIETA, A. et al. Porosity-induced gain of luminescence in CdSe. In: Semiconductor Science and Technology, 2004, V. 19, Nr. 12, pp. L121--L123. ISSN 0268-1242 (print) 1361-6641 (web).	en_US
dc.identifier.uri	https://doi.org/10.1088/0268-1242/19/12/l04
dc.identifier.uri	http://repository.utm.md/handle/5014/10670
dc.description	Access full text - https://doi.org/10.1088/0268-1242/19/12/l04	en_US
dc.description.abstract	Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP Publishing	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous layers	en_US
dc.subject	anodic etching	en_US
dc.subject	crystalline substrates	en_US
dc.subject	luminescence	en_US
dc.title	Porosity-induced gain of luminescence in CdSe	en_US
dc.type	Article	en_US