Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs

LLOYD-HUGHES, J.; MERCHANT, S. K. E.; SIRBU, L.; TIGINYANU, I. M.; JOHNSTON, M. B.

dc.contributor.author	LLOYD-HUGHES, J.
dc.contributor.author	MERCHANT, S. K. E.
dc.contributor.author	SIRBU, L.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	JOHNSTON, M. B.
dc.date.accessioned	2020-10-12T09:51:46Z
dc.date.available	2020-10-12T09:51:46Z
dc.date.issued	2008
dc.identifier.citation	LLOYD-HUGHES, J., MERCHANT, S. K. E., SIRBU, L. et al. Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs. In: Physical Review. B. 2008, V. 78, Iss. 8, pp. 085320. ISSN 1098-0121 (print); 1550-235X (web).	en_US
dc.identifier.uri	https://doi.org/10.1103/PhysRevB.78.085320
dc.identifier.uri	http://repository.utm.md/handle/5014/10651
dc.description	Access full text - https://doi.org/10.1103/PhysRevB.78.085320	en_US
dc.description.abstract	Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity measurements, we demonstrate that nanoporous InP has an unusually long carrier recombination lifetime that exceeds 100 ns at low temperatures and low carrier density, and an electron mobility half that of bulk InP. Modeling confirms that these observations result from band bending with holes confined to the surface and electrons away from the pores.	en_US
dc.language.iso	en	en_US
dc.publisher	American Physical Society	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanostructured semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	electrochemical etching	en_US
dc.subject	terahertz photoconductivity	en_US
dc.subject	photoconductivity	en_US
dc.title	Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs	en_US
dc.type	Article	en_US