Waveguide Structures Based on Porous Indium Phosphide

LANGA, S.; FREY, S.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M.; HERMANN, M.; BÖTTGER, G.

dc.contributor.author	LANGA, S.
dc.contributor.author	FREY, S.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	FÖLL, H.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	HERMANN, M.
dc.contributor.author	BÖTTGER, G.
dc.date.accessioned	2020-10-12T08:58:45Z
dc.date.available	2020-10-12T08:58:45Z
dc.date.issued	2005
dc.identifier.citation	LANGA, S., FREY, S., CARSTENSEN, J. et al. Waveguide Structures Based on Porous Indium Phosphide. In: Electrochemical and Solid-State Letters. 2005, V. 8, Nr. 2, pp. C30. ISSN 1099-0062.	en_US
dc.identifier.uri	https://doi.org/10.1149/1.1847683
dc.identifier.uri	http://repository.utm.md/handle/5014/10647
dc.description	Access full text - https://doi.org/10.1149/1.1847683	en_US
dc.description.abstract	We researched the possibilities for engineering the morphology of porous structures in n-InP. Lithographic patterning of the sample surface before anodic etching was shown to modify considerably the electric field distribution which, in its turn, defined the direction of pore growth inside the specimen. We show that local formation of the nucleation layer combined with the possibility to introduce current-line oriented pores in a controlled manner represents a promising tool for manufacturing waveguide structures based on porous InP. Some results on simulation of the properties of these structures are presented.	en_US
dc.language.iso	en	en_US
dc.publisher	The Electrochemical Society	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous structures	en_US
dc.subject	electric fields	en_US
dc.subject	lithographic patterning	en_US
dc.subject	anodic etching	en_US
dc.subject	pore growth	en_US
dc.subject	waveguide structures	en_US
dc.title	Waveguide Structures Based on Porous Indium Phosphide	en_US
dc.type	Article	en_US