dc.contributor.author | GOMIS, O. | |
dc.contributor.author | SANTAMARÍA-PÉREZ, D. | |
dc.contributor.author | VILAPLANA, R. | |
dc.contributor.author | LUNA, R. | |
dc.contributor.author | SANS, J. A. | |
dc.contributor.author | MANJÓN, F. J. | |
dc.contributor.author | ERRANDONEA, D. | |
dc.contributor.author | PÉREZ-GONZÁLEZ, E. | |
dc.contributor.author | RODRÍGUEZ-HERNÁNDEZ, P. | |
dc.contributor.author | MUÑOZ, A. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.contributor.author | URSAKI, V. V. | |
dc.date.accessioned | 2020-10-09T09:00:23Z | |
dc.date.available | 2020-10-09T09:00:23Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | GOMIS, O., SANTAMARÍA-PÉREZ, D., VILAPLANA, R. et al. Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure. In: Journal of Alloys and Compounds. 2014, V. 583, pp. 70 - 78. ISSN 0925-8388. | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.jallcom.2013.08.123 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/10611 | |
dc.description | Access full text - https://doi.org/10.1016/j.jallcom.2013.08.123 | en_US |
dc.description.abstract | In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation–anion and vacancy-anion distances and compressibilities in HgGa2S4 are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2S4 has been studied. Our calculations indicate that the low-pressure phase of HgGa2S4 becomes mechanically unstable above 13.8GPa. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | semiconductors | en_US |
dc.subject | equations of state | en_US |
dc.subject | elasticity | en_US |
dc.subject | high pressure | en_US |
dc.subject | X-rays diffractions | en_US |
dc.title | Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure | en_US |
dc.type | Article | en_US |
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