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Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks

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dc.contributor.author TIGINYANU, Ion
dc.contributor.author POPA, Veaceslav
dc.contributor.author STEVENS-KALCEFF, Marion A.
dc.date.accessioned 2020-10-09T08:04:59Z
dc.date.available 2020-10-09T08:04:59Z
dc.date.issued 2011
dc.identifier.citation TIGINYANU, Ion, POPA, Veaceslav, STEVENS-KALCEFF, Marion A. Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks. In: Materials Letters. 2011, V. 65, Nr. 2, pp. 360 - 362. ISSN 0167-577X. en_US
dc.identifier.uri https://doi.org/10.1016/j.matlet.2010.10.033
dc.identifier.uri http://repository.utm.md/handle/5014/10602
dc.description Access full text - https://doi.org/10.1016/j.matlet.2010.10.033 en_US
dc.description.abstract We propose a method of direct visualization of the spatial nanoarchitecture of dislocation networks which is based on etching away the regions with low density of structural defects from the bulk of GaN epilayers, keeping intact only the threading dislocations and a thin surface film pre-treated with low-energy Ar+ ions. The formation of nanometer-thick suspended membrane to which the dislocations are genetically attached provides conditions for the revelation of the spatial nanoarchitecture of dislocation networks using conventional scanning electron microscopy. Complementary monochromatic and panchromatic micro-cathodoluminescence images are presented. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject suspended membranes en_US
dc.subject membranes en_US
dc.subject networks en_US
dc.subject electron microscopy en_US
dc.subject luminescence en_US
dc.title Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks en_US
dc.type Article en_US


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