Electrochemical pore etching in Ge

LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H.

dc.contributor.author	LANGA, S.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	FÖLL, H.
dc.date.accessioned	2020-10-09T07:24:27Z
dc.date.available	2020-10-09T07:24:27Z
dc.date.issued	2003
dc.identifier.citation	LANGA, S., CHRISTOPHERSEN, M., CARSTENSEN, J. et al. Electrochemical pore etching in Ge. In: Physica Status Solidi (a). 2003, V. 195, Nr. 3, pp. R4-R6. ISSN 1862-6319.	en_US
dc.identifier.uri	https://doi.org/10.1002/pssa.200306456
dc.identifier.uri	http://repository.utm.md/handle/5014/10597
dc.description	Access full text - https://doi.org/10.1002/pssa.200306456	en_US
dc.description.abstract	Nucleation and growth of electrochemically obtained pores on (111) and (100) oriented n-Ge in different electrolytes was investigated. On rough surfaces pore density increases as the current density increases, whereas on smooth surfaces the situation is inverse, i.e., the pore density increases as the current density decreases. The macropores show strong anisotropic features with a cone-like shape. This can be understood if the passivation of the pore walls in Ge is less pronounced as in the case of Si or III–V compounds, but strongly anisotropic.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	obtained pores	en_US
dc.subject	pores	en_US
dc.subject	macropores	en_US
dc.title	Electrochemical pore etching in Ge	en_US
dc.type	Article	en_US