Nanostructuring induced enhancement of radiation hardness in GaN epilayers

URSAKI, V. V.; TIGINYANU, I. M.; VOLCIUC, O.; POPA, V.; SKURATOV, V. A.; MORKOÇ, H.

dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	VOLCIUC, O.
dc.contributor.author	POPA, V.
dc.contributor.author	SKURATOV, V. A.
dc.contributor.author	MORKOÇ, H.
dc.date.accessioned	2020-10-08T13:37:50Z
dc.date.available	2020-10-08T13:37:50Z
dc.date.issued	2007
dc.identifier.citation	URSAKI, V. V. TIGINYANU, I. M. VOLCIUC, O.et al. Nanostructuring induced enhancement of radiation hardness in GaN epilayers. In: Applied Physics Letters. 2007, V. 90, Nr. 16, pp. 161908. ISSN 0003-6951.	en_US
dc.identifier.uri	https://doi.org/10.1063/1.2723076
dc.identifier.uri	http://repository.utm.md/handle/5014/10586
dc.description	Access full text - https://doi.org/10.1063/1.2723076	en_US
dc.description.abstract	The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanostructured epilayers	en_US
dc.subject	epilayers	en_US
dc.subject	electrochemical nanostructuring	en_US
dc.title	Nanostructuring induced enhancement of radiation hardness in GaN epilayers	en_US
dc.type	Article	en_US