Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques

TIGINYANU, I. M.; POPA, V.; VOLCIUC, O.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	POPA, V.
dc.contributor.author	VOLCIUC, O.
dc.date.accessioned	2020-10-08T10:38:05Z
dc.date.available	2020-10-08T10:38:05Z
dc.date.issued	2005
dc.identifier.citation	TIGINYANU, I. M., POPA, V., VOLCIUC, O. Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques. In: Applied Physics Letters. 2005, V. 86, Iss. 17, pp. 174102-1-174102-3. ISSN 0003-6951.	en_US
dc.identifier.uri	https://doi.org/10.1063/1.1919393
dc.identifier.uri	http://repository.utm.md/handle/5014/10568
dc.description	Access full text - https://doi.org/10.1063/1.1919393	en_US
dc.description.abstract	We show that host defects introduced at the surface of GaN epilayers by mechanical means se.g., using needles, microscribersd, or 2-keV-argon ion beam are resistant to photoelectrochemical etching in aqueous solution of KOH, presumably due to trapped negative charge. The spatial distribution of surface defects and related negative charge can be designed as lithographic mask for the purpose of GaN microstructuring. The possibility to fabricate GaN mesostructures using the approach involved is demonstrated.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	epilayers	en_US
dc.subject	surface defects	en_US
dc.subject	lithographic masks	en_US
dc.subject	mesostructures	en_US
dc.title	Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques	en_US
dc.type	Article	en_US