Browsing by Author "HARTNAGEL, H. L."

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  • Optical mixing in THz Schottky diodes 
    SCHOENHERR, D.; COJOCARI, O.; SYDLO, C.; GOEBEL, T.; FEIGINOV, M.; HARTNAGEL, H. L.; MEISSNER, P. (IEEE, 2008)
    This paper presents the effect of optical mixing in zero-bias InGaAs Schottky detectors at THz frequencies. The excitation of ultrafast carriers by illumination with two 1.5 mum laser beams is verified. This proves the ...
  • Process Control and Failure Analysis Implementation for THz Schottky-based components 
    ICHIZLI, V.; RODRÍGUEZ-GIRONÉS, M.; MARCHAND, L.; GARDEN, C.; COJOCARI, O.; MOTTET, B.; HARTNAGEL, H. L. (Elsevier, 2002)
    Schottky diodes and integrated circuits are most used devices for both frequency mixing and multiplying in THz range. Higher operational frequencies require of the devise dimensions. Devise dimensions in THz range are often ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...
  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing 
    SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • Recent Progress in GaN-based Devices for Terahertz Technology 
    SIRKELI, V. P.; TIGINYANU, I. M.; HARTNAGEL, H. L. (Tehnica UTM, 2019)
    This paper reviews the crystal growth, basic properties, and principle of operation of III-nitride based terahertz devices. We provide a brief history and current status of crystal growth of polar and non-polar GaN-based ...
  • Technology of Wide-Bandgap Diode Structures for Highfrequency Operation 
    MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)
    This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...
  • Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L. (IEEE, 1997)
    InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of ...
  • ZnO-based Quantum Structures for Terahertz Sources 
    SIRKELI, V. P.; HARTNAGEL, H. L.; YILMAZOGLU, O.; PREU, S. (Tehnica UTM, 2019)
    In this paper we report on the numerical study of the terahertz devices based on metal oxide semiconductors and its application in biology and medicine. We also report on the recent progress of the theoretical and experimental ...

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