Articole din publicaţii internaţionale: Recent submissions

  • Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; FOCA, E.; FÖLL, H. (The Electrochemical Society, 2007)
    We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • Ordered arrays of metal nanotubes in semiconductor envelope 
    TIGINYANU, Ion; MONAICO, Elena; MONAICO, Eduard (ELSEVIER, 2008)
    We report on fabrication of metal nanotubes in semiconductor nanotemplates possessing ordered two-dimensional hexagonal arrays of pores grown in n-InP crystalline substrates using anodic etching in neutral electrolyte. ...
  • High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4ZnGa2Se4 and CdGa2S4CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4ZnGa2Se4 exhibits a defect tetragonal ...
  • Correlation between morphology and cathodoluminescence in porous GaP 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H.; HARTNAGEL, H. L. (American Institute of Physics, 2001)
    Porous layers fabricated by anodic etching of n-GaPn-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence (CL) microanalysis. The morphology of porous layers was found to ...
  • Single crystalline 2D porous arrays obtained by self organization in n-Inp 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
  • Fröhlich modes in porous III-V semiconductors 
    SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • Fröhlich modes in gan columnar nanostructures 
    TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Observation of crossing pores in anodically etched n-GaAs 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; STEEN, K.; FREY, S.; TIGINYANU, I. M.; FÖLL, H. (The Electrochemical Society, Inc., 2005)
    Morphology is one of the basic characteristics of porous layers. For electrochemically grown pores, morphology is strongly dependent on the starting phase of pore growth, the so-called nucleation phase. This paper addresses ...
  • Time resolved blue and ultraviolet photoluminescence in porous GaP 
    ANEDDA, A.; SERPI, A.; KARAVANSKII, V. A.; TIGINYANU, I. M.; ICHIZLI, V. M. (American Institute of Physics, 1995)
    Porous GaP layers prepared by electrochemical anodization of (100)-oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV ...
  • Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Selective Multiterminal Sensor on Individual ZnO Nanotetrapod 
    LUPAN, O.; CHAI, G.; CHOW, L.; TROFIM, V. (NSTI, 2009)
    This article presents a sensitive and selective sensor based on an individual zinc oxide nanotetrapod and on crossed ZnO nanorod for detection of UV light and hydrogen at low temperature. It is demonstrated that ZnO tetrapod ...
  • Synthesis and Characterization of Functional Nanostructured Metal Oxide Thin Films 
    CHOW, Lee; SHISHIYANU, S.; LUPAN, Oleg; SHISHIYANU, Teodor (ECS - The Electrochemical Society, 2006)
    The nanomaterials are obtained to analyze the physical and structural requirements of their applications in gas sensors and solar cells. This claim is sustained by a model of the nucleation and growth processes through the ...
  • Investigation of tin oxide nanobelts/nanoribbons prepared by chemical deposition technology 
    LUPAN, O.; CHOW, L.; CHAI, G.; SCHULTE, A.; PARK, S.; HEINRICH, H.; SONTEA, V.; TROFIM, V.; RAILEAN, S. (Institute of Electrical and Electronics Engineerings, IEEE, 2008)
    A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized ...
  • ZnO-based Nanowires for hybrid low-voltage LED 
    LUPAN, Oleg; PAUPORT, Thierry; VIANA, Bruno (Optical Society of America, 2011)
    Nanowires (NW) based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film devices. Marked improved performances are expected from nanostructured active layers for light emission. ...
  • ZnO Nanowire emitters for tunable near-UV-Blue Light emitting diodes 
    VIANA, B.; LUPAN, O.; PAUPORTÉ, T. (Vinča Institute of Nuclear Sciences Belgrade, Serbia, 2011)
    We have shown that the emission wavelength could be tuned and shift toward the violet-blue region by up to 40 nm by doping with Cu or Cd . Our results clearly state the remarkable quality of the pure and doped-ZnO ...

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