Articole din publicaţii internaţionale: Recent submissions

  • Exciton polariton spectra and carrier effective masses in ZnO single crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V. (ELSEVIER, 2004)
    Photoreflectivity and photoluminescence spectra in the region of exciton resonance were measured in ZnO single crystals. A, B, and C exciton binding energies were determined from the energy position of the ground and excited ...
  • Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4 
    GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M. (ELSEVIER, 2001)
    The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity ...
  • Surface-related phonon mode in porous GaP 
    TIGINYANU, I. M.; URSAKI, V. V.; KARAVANSKII, V. A.; SOKOLOV, V. N.; RAPTIS, Y. S.; ANASTASSAKIS, E. (ELSEVIER, 1996)
    Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was ...
  • Photoluminescence and resonant Raman scattering from ZnO-opal structures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Post-spinel transformations and equation of state in ZnGa2O4: Determination at high pressure by in situ x-ray diffraction 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; RUSU, E. V. (American Physical Society, 2009)
    Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • Ultraviolet photoconductive sensor based on single ZnO nanowire 
    LUPAN, O.; CHAI, G.; CHOW, L.; EMELCHENKO, G. A.; HEINRICH, H.; URSAKI, V. V.; GRUZINTSEV, A. N.; TIGINYANU, I. M.; REDKIN, A. N. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2010)
    ZnO nanowires were synthesized by the CVD procedure and have been investigated by SEM, TEM, SAED, Raman, and cw PL spectroscopy. The fabrication of an ultraviolet (UV) photoconductive detector based on single ZnO nanowire ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor 
    SPRINCEAN, Veaceslav; LUPAN, Oleg; CARAMAN, Iuliana; UNTILA, Dumitru; POSTICA, Vasile; COJOCARU, Ala; GAPEEVA, Anna; PALACHI, Leonid; ADELING, Rainer; TIGINYANU, Ion; CARAMAN, Mihail (ELSEVIER, 2021)
    In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The results show that the properties of ...
  • Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface 
    COJOCARU, A.; SHERBAN, D.; SIMASHKEVICH, A.; TIGINYANU, I.; TSIULYANU, I.; URSAKI, V. (IEEE, 2002)
    The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs ...
  • Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures 
    POPA, V.; VOLCIUC, O.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2004)
    In this note we demonstrate that artificially introduced surface defects in GaN epilayers are stable against photoelectrochemical etching in aqueous solution of KOH. The origin of this stability is attributed to the negative ...
  • Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors 
    COJOCARU, A.; FOCA, E.; CARSTENSEN, J.; LEISNER, M.; TIGINYANU, I. M.; FÖLL, H. (Springer, Berlin, Heidelberg, 2009)
    This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In ...
  • Rayleigh scattering of a metal nanoparticle on a flat dielectric surface 
    SERGENTU, V.; ESINENCO, D.; SIRBU, L.; VODĂ, I.; VOICU, R.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2010)
    It is shown experimentally and theoretically that electromagnetic interaction of a nanoparticle with a flat dielectric surface leads to occurrence of an additional peak in the spectrum of Rayleigh scattering which is due ...
  • Retroreflection from disordered porous semiconductors 
    PRISLOPSKI, S.; TIGINYANU, I. M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; ZHUKOVSKY, S. V.; GAPONENKO, S. V. (IEEE, 2011)
    Prominent retroreflection is experimentally observed in disordered porous InP membranes. It is believed to be the result of an interplay between Fresnel-like and Bragg-like reflection for different components of an impinging ...
  • Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy 
    LLOYD-HUGHES, James; MUELLER, Susanne; SCALARI, Giacomo; BISHOP, Hugh; CROSSLEY, Alison; ENACHI, Mihai; SIRBU, Lilian; TIGINYANU, Ion (American Physical Society, 2012)
    A precise control of the surface properties of semiconductor nanomaterials is vital for their functionality and use in many opto-electronic applications. Terahertz time-domain spectroscopy allows the non-contact investigation ...
  • Microcharacterization of GaN Nanomembranes Using Cathodoluminescence Microanalysis 
    STEVENS-KALCEFF, Marion A.; TIGINYANU, I. M.; POPA, V. (ProQuest LLC, 2012)
    Gallium nitride (GaN) is a thermally stable, chemically inert wide-band-gap compound semiconductor with applications in high temperature, high power, high frequency electronic devices, solid state sensors, optoelectronics ...
  • Electrochemistry-based maskless nanofabrication 
    TIGINYANU, Ion; MONAICO, Eduard; POPA, Veaceslav (IEEE, 2012)
    A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on ...

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