Characterization of morphological, optical, and electrophysical properties of Cu₂O Thin films obtained by RF sputtering

Abstract

Metal oxide semiconductors, owing to their versatile electronic properties, are essential materials for a wide range of applications, including photovoltaic and photoelectrochemical cells, photodetectors, and power electronic devices. Their functionality as selective charge transport layers or light absorbers is determined by their electrical conductivity, work function, and band gap. Copper oxide (Cu₂O), a p-type semiconductor with a band gap in the range of 1.9–2.6 eV, has attracted significant attention as a hole transport layer in perovskite solar cells due to its promising efficiency and stability.