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The optical absorption and Raman scattering in glassy thin films from the intermediate phase of As-S-Ge system TIULEANU Ana-Maria
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| dc.contributor.author | TSIULYANU, Dumitru | |
| dc.contributor.author | CIOBANU, Marina | |
| dc.contributor.author | TIULEANU, Ana-Maria | |
| dc.date.accessioned | 2025-07-16T08:34:36Z | |
| dc.date.available | 2025-07-16T08:34:36Z | |
| dc.date.issued | 2024 | |
| dc.identifier.citation | TSIULYANU, Dumitru; Marina CIOBANU and Ana-Maria TIULEANU. The optical absorption and Raman scattering in glassy thin films from the intermediate phase of As-S-Ge system. In: IEEE Conference on Advanced Topics on Measurement and Simulation, ATOMS, Romania, Constanta, 28-30 August, 2024. Institute of Electrical and Electronics Engineers, 2024, pp. 113-115. ISBN 979-8-3503-5838-4, eISBN 979-835035837-7. | en_US |
| dc.identifier.isbn | 979-8-3503-5838-4 | |
| dc.identifier.isbn | 979-835035837-7 | |
| dc.identifier.uri | https://doi.org/10.1109/ATOMS60779.2024.10921620 | |
| dc.identifier.uri | https://repository.utm.md/handle/5014/32815 | |
| dc.description | Access full text: https://doi.org/10.1109/ATOMS60779.2024.10921620 | en_US |
| dc.description.abstract | The edge of the strong light absorption of glassy chalcogenide thin films, from the intermediate phase of As-S-Ge system has been investigated along the GeS4-AsS3 tie-line in conjunction with Raman scattering. The optical forbidden gap and its dependence on glass composition was determined. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | optical absorption | en_US |
| dc.subject | raman spectra | en_US |
| dc.title | The optical absorption and Raman scattering in glassy thin films from the intermediate phase of As-S-Ge system TIULEANU Ana-Maria | en_US |
| dc.type | Article | en_US |
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