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Improvement of InP crystalline perfection by He+-implantation and subsequent annealing
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| dc.contributor.author | TIGINYANU, I. M. | |
| dc.contributor.author | TERLETSKY, A. I. | |
| dc.contributor.author | URSAKI, V. V. | |
| dc.date.accessioned | 2020-11-16T13:03:40Z | |
| dc.date.available | 2020-11-16T13:03:40Z | |
| dc.date.issued | 1995 | |
| dc.identifier.citation | TIGINYANU, I. M., TERLETSKY, A. I., URSAKI, V. V. et al. Improvement of InP crystalline perfection by He+-implantation and subsequent annealing. In: Solid State Communications, 1995, V. 96, Nr. 10, pp. 789-792. ISSN 0038-1098. | en_US |
| dc.identifier.uri | https://doi.org/10.1016/0038-1098(95)00452-1 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/11488 | |
| dc.description | Access full text - https://doi.org/10.1016/0038-1098(95)00452-1 | en_US |
| dc.description.abstract | The influence has been studied of 100-keV He+-ion implantation and subsequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations of the surface. Improvement of InP crystalline perfection was observed after He+-implantation at the dose 1 × 1015cm−2 followed by sample annealing at 600–700°C. Implant-induced removal of thermally stable defect clusters related with the growth process is supposed to be primarily responsible for the phenomenon involved. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | ELSEVIER | en_US |
| dc.subject | semiconductors | en_US |
| dc.subject | order-disorder effects | en_US |
| dc.subject | radiation | en_US |
| dc.subject | light scattering | en_US |
| dc.title | Improvement of InP crystalline perfection by He+-implantation and subsequent annealing | en_US |
| dc.type | Article | en_US |
