Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films

LAZARENKO, P.; SITNIKOV, A.; KOZYUKHIN, S.; SELEZNEV, D.; KOZLOV, A.; YAKUBOV, A.; SHERCHENKOV, A.; VOROBYOV, YU.; BOYTSOVA, O.; KIRILENKO, E.; KULEVOY, T.

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Effect of indium and tin ion implantations on the properties of Ge2Sb2Te5 thin films

LAZARENKO, P.; SITNIKOV, A.; KOZYUKHIN, S.; SELEZNEV, D.; KOZLOV, A.; YAKUBOV, A.; SHERCHENKOV, A.; VOROBYOV, YU.; BOYTSOVA, O.; KIRILENKO, E.; KULEVOY, T.

URI: http://repository.utm.md/handle/5014/5879

Date: 2019

Abstract:

One of the most perspective electrical and optical non-volatile memory type is phase change memory (PCM) based on the chalcogenide materials, particularly on GST225 [1]. Introduction of dopants is an effective method for purposeful change of the GST225 properties, 22 Regular Papers – Oral Session which can be used for optimization of the characteristics of the material for PCM application. In this work, we investigated the influence of In and Sn dopants introduced by implantation on the properties of GST225 thin films. The ion implantations were carried out on Multipurpose Test Bench (MTB) at NRC "Kurchatov Institute"-ITEP.