Angle dependence of the magnetoresistance in bi nanowires

Abstract

Bulk bismuth has been classified as a trivial topological insulator (TI) where the surface states do not have topological protection. Still, the electronic mobility of surface states is exceptionally large. This is not surprising if we consider that bulk Bi can be assembled by stacking bilayers, and that the bilayer of Bi is thought to represent a two dimensional TI that supports edge modes propagating along the perimeter of the sample, modes that exhibit coherent propagation and suppression of backscattering.