Abstract:
The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased [1]. As a result of almost 20-year studying, the some physical models of effect are developed, being described in [2] in detail. Accelerated test methods, based on these models use in standards [3, 4]. In [5] the conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model’s fitting parameters extraction.