Approximation of MOSFET Transistor Characteristics in Micro-and Nanoelectronics

Abstract

The base approach, giving a wide class of functions convenient for engineering practice for the formal description of I-V characteristics of the MOSFET transistors, is developed. The similarity of I-V characteristics of semiconductor devices and the quasi-resonant converter of voltage is an approach basis. The offered functions have certain physical sense that allows modifying purposefully them for the flexibility of their form.