ROCCA, J. A.; RODRÍGUEZ, O. C.; UREÑA, M. A.; BILOVOL, V.; FONTANA, M.
(Tehnica UTM, 2019)
Ge-Sb-Te phase-change materials in compositions close to Ge2Sb2Te5 and doped with Sn
have been proposed to improve performance of phase-change memories (PCM) [1]. In a previous
work we found that Sb70Te30 thin films show ...