Micro- and nano-structured oxides based on Cd- and Sn-doped InSe for volatile organic compound sensors applications

Abstract

Indium oxide (In2O3) is a material widely used in electronic devices as electrodes with high electrical conductivity and optical transparency. The properties of this material extend with the transition from monocrystalline and polycrystalline thin layers to nanostructured films (nanowires, nanobelts, nanoparticles, etc.). In the nanostructured In2O3 material, together with the characteristic properties of the In2O3 compound, an intense luminescence in the visible range of the spectrum is emphasized, with maximum intensity in the blue region. In this work, micro and nanostructured In2O3 and In2O3-InSe (Cd, Sn) layers and micro and nanostructures were fabricated by heat treatment (TT) in atmosphere of undoped InSe single-crystalline wafers doped with Cd and Sn in concentrations ranging from 0.25 at.% and 1.5 at.%. X-ray diffraction (XRD) studies, EDX plots and Raman spectra demonstrated that the layer formed on the surface of InSe (Cd, Sn) plates corresponds to the In2O3 compound.