Abstract:
The elaborated method gives the possibility to determine the energy of electronic transitions in semiconductors at a high resolution for estimating an interference spectra structure for analyzing ordinary and extraordinary light dispersion in crystals. The used optic system allows data registering with a spectral width of the slit 0.02 Å (±0.01 meV) using a double Raman spectrometer СДЛ- 1 and МДР-2, which has the linear dispersion of 7Å/mm and relative aperture 1:2.