Browsing Colecția instituțională by Title

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  • STAMOV, I. G.; SYRBU, N. N.; ZALAMAI, V. V. (Elservier, 2014)
    The emission lines of bound and free excitons and their phonon replicas were observed in the luminescence spectra of ZnP2-D48 crystals doped with Mn, Sn, Cd and Sb measured at 10K. The emission lines are described by the ...
  • STAMOV, I. G.; ZALAMAI, V. V.; SYRBU, N. N.; TIRON, A. V. (Elsevier, 2020)
    Interference spectra of layered ZnIn2S4 crystals were investigated for samples of different thicknesses (7.5–900 μm). Spectral dependences of refractive indices (na and nb) for light waves with different polarizations were ...
  • SYRBU, N. N.; KRASOVSKY, V. T.; GITSU, D. V.; GRINCHESCHEN, I. N. (Elservier, 1995)
    Fundamental absorption edge spectra and reflectivity spectra of TlaAsS3, T13AsSe3 and TlaSbS 3 crystals have been investigated in the range 1-6 eV at 300 and 77 K. Polarization dependences of three excitonic series ground ...
  • SOBOLEV, V. V.; SYRBU, N. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    Edge absorption, photoconductivity, and reflectivity spectra are investigated of Zn3P2 crystals in the range from 1 to 12.5 eV and reflectivity spectra of Cd3P2 crystals in the range from 1 to 12.5 eV. The Eg value of Zn3P2 ...
  • BOBRYSHEVA, A. I.; RUSSU, S. S. (John Wiley & Sons, Inc., 1990)
    It is shown that in ZnSe/(Zn, Mn)Sequantum wells six biexcitonic states can exist. The group-theoretical classification of these states is performed. The probabilities of biexciton two-photon absorption, hyper-Raman ...
  • GUC, M.; BODNAR, I.; DERMENJI, L.; LEVCENKO, S.; ARUSHANOV, E.; SYRBU, N. N. (Institutul de Fizică Aplicată al AŞM, 2012)
    Cu2ZnGeSe4 (CZGSe) is interesting and promising p-type semiconductor materials for optoelectronics applications and solar cells. In this paper we present reflectivity spectra measured at 300 K in the photon energy range ...
  • LEVCENKO, S.; SYRBU, N. N.; NATEPROV, A.; ARUSHANOV, E.; MERINO, J. M.; LEÓN, M. (IOP Publishing, 2006)
    Single crystals of CuGa3Se5 have been grown by chemical vapour transport. Optical properties of CuGa3Se5 have been investigated in the temperature range between 10 K and room temperature 300 K. The temperature dependence ...
  • LEVCENKO, S.; SYRBU, N. N.; ARUSHANOV, E.; TEZLEVAN, V.; FERNÁNDEZ-RUIZ, R.; MERINO, J. M.; LEÓN, M. (American Institute of Physics, 2006)
    Single crystals of CuIn5Se8 have been grown by chemical vapor transport. The crystals show a deviation from stoichiometry. The temperature dependence of their optical absorption spectra was investigated in the temperature ...
  • MUSINSCHI, V.; CARAMAN, M.; MUSINSCHI, C.; SYRBU, N. (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, 2009)
    The interest in the study of the optical properties of TeO2 and PbMoO4 crystals is determined not only by the fundamental physical mechanisms present in these materials but also by a wide spectrum of possible applications ...
  • URSAKI, V. V.; LAIR, V.; ŻIVKOVIĆ, L.; CASSIR, M.; RINGUEDÉ, A.; LUPAN, O. (ELSEVIER, 2012)
    Nanostructured undoped and samarium doped ceria thin nanocolumnar films are electrodeposited onto (FTO) glass substrates at low-temperature (30°C) with a subsequent thermal annealing at 600°C for 1h. Films are obtained ...
  • SYRBU, N. N.; DOROGAN, V. V.; NEMERENCO, L. L.; VIERU, T. S. (American Institute of Physics, 2006)
    Optical properties of acousto-optical material Tl3SbS3 were investigated at the fundamental absorption edge. The basic (n=1) and excited (n=2, 3) exciton states were obtained from the λ-modulated reflection spectra for ...
  • TIRON, A. V. (Universitatea Academiei de Ştiinţe a Moldovei, 2015)
    TIGaSe2 semiconductors crystallize as a layered structure and have monoclinic lattice. One of the features of these crystals is a strong anisotropy of physical characteristics due to the specificity of the crystal structure. ...
  • LUPAN, O.; PAUPORTÉ, Th.; TIGINYANU, I. M.; URSAKI, V. V.; HEINRICH, H.; CHOW, L. (ELSEVIER, 2011)
    Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on ...
  • STEELE, J. A.; LEWIS, R. A.; SIRBU, L.; ENACHI, M.; TIGINYANU, I. M.; SKURATOV, V. A. (IOP Publishing, 2015)
    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was ...
  • ALEXANDRU, Burlacu (Tehnica UTM, 2020)
    Training neural networks is hard. The industry is approaching the limits of siliconbased computing, both in terms of transistor size and chip dimensions. There are already examples of technologies that allow computations ...
  • RADAUTSAN, S. I.; SYRBU, N. N.; TESLEVAN, V. E.; CHUMAK, I. V. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1973)
    The anisotropy of the absorption and electroabsorption spectra of CdP2 and CdP4, single crystals has been investigated. A number of interband gaps has been determined and specified. The energies and the type of phonons ...
  • STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. (ELSEVIER, 2012)
    Ground and excited states of three exciton series are observed in the region of fundamental absorption edge of AgAsS2 crystals. The contours of exciton reflection spectra are calculated and the main parameters of excitons ...
  • LEVCENKO, S.; SYRBU, N. N.; TEZLEVAN, V. E.; ARUSHANOV, E.; DOKA-YAMIGNO, S.; SCHEDEL-NIEDRIG, Th.; LUX-STEINER, M. Ch. (IOP Publishing, 2007)
    The reflection spectroscopy of chalcopyrite CuGaS2 and CuInS2 single crystals has been applied for light polarized perpendicular () and parallel () to the optical axis in the photon energy range between 1.5 and 6 eV at 77 ...
  • SOBOLEV, V. V.; SYRBU, N. N. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1972)
    The anisotropic spectra of edge absorption, reflection, and photoconductivity of the monoclinic ZnP2, and ZnA2, crystals have been experimentally investigated at 293 and 77 °K. The group-theoretical calculations of selection ...
  • SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...

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