Полупроводниковые Свойства в Размерноограниченных Объектах Bi0,88Sb0,12

Abstract

In this work was studied the charge carrier concentration of film single crystals. The measurements were made at temperature T=4.2 – 300 K. The thickness of the samples ranged from 0.2 mkm to 1.3 mkm. It was found that n~AT2.3. It allows to conclude that film single crystals Bi0,88Sb0,12 possess semiconducting properties.