Colecția instituțională: Recent submissions

  • 3D–2D crossover in melting transition on superconducting Mo/Si multilayers 
    FOGEL, Nina Ya.; CHERKASOVA, V. G.; RYBALCHENKO, V. N.; KORETZKAYA, O. A.; SIDORENKO, A. S. (Springer Nature Switzerland, 1996)
    Two-dimensional and three-dimensional vortex-lattice melting is observed on superconducting Mo/Si multilayers. Quasi-2D melting takes place in the range of high magnetic fields. The position of the melting transition on ...
  • Rețele de gaze – estimarea valorii în condițiile Republicii Moldova (studiu de caz) 
    ALBU, Svetlana (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2016)
    Necesitatea evaluării rețelelor de gaze apare în R.Moldova ca urmare a demonopolizării ramurii, apariția pe piață a mai multor operatori de rețea și furnizori. În procesul activității economice proprietarii rețelelor de ...
  • Wafer level vacuum packaging of micro-mirrors with buried signal lines 
    LANGA, S.; DRABE, C.; HERRMANN, A.; LUDEWIG, T.; RIECK, A.; FLEMMING, A.; KADEN, C. (Springer Nature Switzerland, 2015)
    This paper presents the vacuum wafer level packaging of in-house manufactured two-dimensional micro- mirrors based on the electrostatic driving principle, fabricated using a bulk technology on bonded-silicon-on-insulator ...
  • Translatory MEMS actuator with wafer level vacuum package for miniaturized NIR Fourier transform spectrometers 
    SANDNER, Thilo; GAUMONT, Eric; GRASSHOFF, Thomas; AUBÖCK, Gerald; KENDA, Andreas; GISLER, Thomas; LANGA, Sergiu; HERRMANN, Andreas; GRAHMANN, Jan (Society of Photo-Optical Instrumentation Engineers, SPIE, 2018)
    A translatory MOEMS actuator with extraordinarily large stroke - especially developed for fast optical path-length modulation in miniaturized FT-spectrometers (FTS) designed for NIR spectral region (800 nm – 2500 nm) - is ...
  • The Impact of Porosity upon the Cathodoluminescence from III-V Compounds 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H. (Cambridge University Press, 2002)
    The development of applications involving porous materials requires understanding of their special properties. Most published investigations have used photoluminescence (PL) techniques to determine the average emission ...
  • Technological aspects of a new micro-electro-mechanical actuation principle: nano-e-drive 
    LANGA, S.; CONRAD, H.; KAISER, B.; STOLZ, M.; GAUDET, M.; UHLIG, S.; SCHIMMANZ, K.; SCHENK, H. (Springer Nature Switzerland, 2003)
    This paper presents the technological aspects of a newly demonstrated actuation principle, the so-called nano-e-drive. Using this principle, cantilevers can be moved in or out of chip plane. In this paper, only the ...
  • Selforganized formation of crystallographically oriented octahedral cavities during electrochemical pore etching 
    LÖLKES, S.; CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; FÖLL, H. (ELSEVIER, 2003)
    The parameter dependence of electrochemically etched pores in silicon is studied. Using HF containing organic electrolytes and backside illumination on moderately doped silicon, macropores and octahedrally shaped pores can ...
  • Self-organized pore formation and open-loop control in semiconductor etching 
    CLAUSSEN, Jens Christian; CARSTENSEN, Jürgen; CHRISTOPHERSEN, Marc; LANGA, Sergiu; FÖLL, Helmut (American Institute of Physics, 2003)
    Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable, e.g., of regular, diameter-modulated, and branching ...
  • Self-Organized Formation of Fractal and Regular Pores in Semiconductors 
    CLAUSSEN, Jens Christian; CARSTENSEN, Jürgen; CHRISTOPHERSEN, Marc; LANGA, Sergiu; FÖLL, Helmut (Springer Nature Switzerland, 2003)
    Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The ...
  • Room temperature bonding for vacuum applications: climatic and long time tests 
    LANGA, S.; UTSUMI, J.; LUDEWIG, T.; DRABE, C. (Springer Nature Switzerland, 2013)
    A detailed and quantitative motivation for the necessity of room temperature (RT) bonding for wafer level packaging of silicon micro-mirrors will be given. Results on RT 6 inch wafer bonding with vacuum encapsulation on ...
  • Open-loop-control of pore formation in semiconductor etching 
    CLAUSSEN, J. C.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; LANGA, S.; FOLL, H. (IEEE, 2003)
    Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered ...
  • Conceptul de performanţă în construcţii prin prisma costului 
    VASCAN, Gr. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    high performance requires greater initial expense, on the growth of these performances, spending time instead of using construction (operation, maintenance, repairs) are even lower as the original quality is higher; defects ...
  • Normarea resurselor în construcţii. Actualitate şi perspective 
    VASCAN, Gr.; LUPUŞOR, N. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    Perform any construction work requires a well-established resource consumption. The inputs to achieve the construction works of the same quality are lower, more efficient production process. Execuţia oricărei lucrări ...
  • Large area etching for porous semiconductors 
    CARSTENSEN, J.; CHRISTOPHERSEN, M.; LÖLKES, S.; OSSEI-WUSU, E.; BAHR, J.; LANGA, S.; POPKIROV, G.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    While electrochemical etching of small samples in the 1 cm region is relatively easy, this is not true for large areas, i.e. standard wafer sizes up to 300 mm. The paper outlines the specific demands and difficulties in ...
  • Soluţiile constructive şi tehnologiile de execuţie, factori de influenţă asupra produsului finit 
    DOHMILĂ, Iu.; DOHMILĂ, E.; LUPUŞOR, N. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    In the result of the effected researches is firstly emphasize the defects and errors weight for each stage of the object making up. It was established in this manner the zone to which we have to direct the principal efforts ...
  • Utilizarea conceptului de performanţă pentru aprecierea calităţii clădirilor 
    DOHMILĂ, Iu.; DOHMILĂ, E.; LUPUŞOR, N. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    Evaluation of several design alternatives to achieve the object of investment – is an attribute of project construction, which can provide priority for competition in tenders (beneficiary). Variants developed more technical ...
  • Optimizarea structurilor de rezistenţă pentru casele de locuit individuale 
    DOHMILĂ, Iu.; DOHMILĂ, E.; LUPUŞOR, N. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    Research has shown that the performance indicator is a characteristic resistance Policies death resistance structures thatdetermine the quality and performance constructive solution. Thepresented papers fots investigated, ...
  • Betoane celulare pe baza deşeurilor industriale pentru construcţii de îngrădire 
    LUPUŞOR, N.; DOHMILĂ, Iu. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    Technology developed to obtain low density binder mixtures for construction offencing directly to the building site, with activation preventive wet, permits to increase the physical-mechanical and exploitation of cellular ...
  • Инновационная технология производства бетонных смесей 
    ШАМИС, Е.; ХОЛДАВЕВА, М.; ИВАНОВ, В. (Institutul de Cercetări Ştiinţifice în Construcţii "INCERCOM" Î.S., 2012)
    This paper proposes a fundamentally new energy-efficient and effective technology of hydraulic concrete mixtures. The technique of design mixes and special equipment, leveraging the strength properties of cement, providing ...
  • Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique 
    KOLKOVSKY, Vl.; STÜBNER, R.; LANGA, S.; WENDE, U.; KAISER, B.; CONRAD, H.; SCHENK, H. (ELSEVIER, 2016)
    In the present study the electrical properties of 100nm and 400nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440°C and after a dc H plasma ...

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