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Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer
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| dc.contributor.author | QASSEM, A. AL | |
| dc.contributor.author | GAGARA, L. | |
| dc.contributor.author | FEDOROV, V. | |
| dc.contributor.author | LUNGU, I. | |
| dc.contributor.author | POTLOG, T. | |
| dc.date.accessioned | 2020-05-30T19:45:57Z | |
| dc.date.available | 2020-05-30T19:45:57Z | |
| dc.date.issued | 2019 | |
| dc.identifier.citation | QASSEM, A. AL, GAGARA, L., FEDOROV, V. et al. Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 91. ISBN 978-9975-72-392-3. | en_US |
| dc.identifier.isbn | 978-9975-72-392-3 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/8494 | |
| dc.identifier.uri | https://doi.org/10.1007/978-3-030-31866-6_125 | |
| dc.description | Access full text - https://doi.org/10.1007/978-3-030-31866-6_125 | en_US |
| dc.description.abstract | In fabricating CdS/CdTe photovoltaic devices by close space sublimation method, thermal annealed in CdCI2 ambient at 400 °C at the interface is deposited an i-CdO layer by magnetron sputtering. Comparative analysis of electrical, photovoltaic parameters and photo-response spectral distribution is studied. The insertion of i-CdO at the interface of device increases both short circuit current (Isc) and open circuit voltage (Voc). In addition, the experimental results revealed that the insertion of i-nanolayer broaden the depletion region of the device and diminish the interface state density, thus improving efficiency of the device. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | photovoltaic devices | en_US |
| dc.subject | close space sublimation method | en_US |
| dc.subject | photovoltaic parameters | en_US |
| dc.subject | electrical parameters | en_US |
| dc.title | Comparative Study of the p-CdS/n-CdTe Photovoltaic Devices with Depleted Intrinsic Layer | en_US |
| dc.type | Article | en_US |
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