Silicon nitride multi nanolayer system fabricated in one reactor

AVOTINA, Liga; DEKHTYAR, Yuri; ROMANOVA, Marina; SHULZINGER, Evgeny; SCHMIDT, Ben; VILKEN, Aleksandr; ZASLAVSKI, Aleksandr; ENICHEK, Gennady

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dc.contributor.author	AVOTINA, Liga
dc.contributor.author	DEKHTYAR, Yuri
dc.contributor.author	ROMANOVA, Marina
dc.contributor.author	SHULZINGER, Evgeny
dc.contributor.author	SCHMIDT, Ben
dc.contributor.author	VILKEN, Aleksandr
dc.contributor.author	ZASLAVSKI, Aleksandr
dc.contributor.author	ENICHEK, Gennady
dc.date.accessioned	2020-04-30T11:39:26Z
dc.date.available	2020-04-30T11:39:26Z
dc.date.issued	2018
dc.identifier.citation	AVOTINA Liga, DEKHTYAR Yuri, ROMANOVA Marina, et al. Silicon nitride multi nanolayer system fabricated in one reactor. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 6th intern. conf., May 24-27, 2018. Chişinău, 2018, pp. 29-32. ISBN 978-9975-45-540-4.	en_US
dc.identifier.isbn	978-9975-45-540-4
dc.identifier.uri	http://repository.utm.md/handle/5014/8051
dc.description.abstract	The silicon nitride nanomultilayer structure (5 layers, thickness of each around 12 nm) was fabricated in one reactor. The structure had less oxygen concentration against the monolayer one having the same thickness. The oxygen and its originated centers were identified because of XPS, prethershold photoelectron emission spectroscopy and FTIR measurements. Oxygen connected electrically active centers decreased an electrical capacitance of the silicon nitride based capacitors.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electron emissions	en_US
dc.subject	optical absorptions	en_US
dc.subject	silicon nitride	en_US
dc.subject	nanolayers	en_US
dc.subject	electrical capacitance	en_US
dc.subject	nanomultilayers	en_US
dc.title	Silicon nitride multi nanolayer system fabricated in one reactor	en_US
dc.type	Article	en_US