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Future trends in power electronic devices

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dc.contributor.author BĂJENESCU, Titu-Marius I.
dc.date.accessioned 2020-01-31T14:19:21Z
dc.date.available 2020-01-31T14:19:21Z
dc.date.issued 2019
dc.identifier.citation BĂJENESCU, Titu-Marius I. Future trends in power electronic devices. In: Journal of Engineering science. 2019, vol. 26(4), pp. 67-77. ISSN 2587-3474. EISSN 2587-3482. en_US
dc.identifier.issn 2587-3474
dc.identifier.issn 2587-3482
dc.identifier.uri https://www.doi.org/10.5281/zenodo.3591592
dc.identifier.uri http://repository.utm.md/handle/5014/7987
dc.description.abstract The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new specifications such as high frequencies, high voltages, high temperatures and high current densities. All of this contributes in the strong development of power devices. To this end, separation techniques for low-resistivity films should be developed, as well as thick-film growth technologies, including hot filament CVD on insulating wafers. The article outlines the evolution of semiconductor manufacturing, current applications and perspective. en_US
dc.description.abstract Progresul tehnologic recent al semiconductorilor și creșterea cererii de dispozitive electronice de putere în diferite domenii ale energiei electrice, în special pentru aplicaţiile aeronautice și reţelele de transport și distribuţie impun noi specificaţii, cum ar fi frecvenţe înalte, tensiuni și temperature ridicate, densităţi mari de curent. Toate acestea contribuie la dezvoltarea puternică a dispozitivelor de alimentare. În acest scop, ar trebui dezvoltate tehnici de separare pentru pelicule cu rezistivitate scăzută, precum și tehnologii de creștere a filmelor groase, inclusiv CVD cu filament fierbinte pe placi izolatoare. Articolul prezintă evoluţia producţiei de semiconductori, aplicaţiile actuale și perspective. ro
dc.language.iso ru en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject generative adversarial network en_US
dc.subject GaN en_US
dc.subject insulated-gate bipolar transistor en_US
dc.subject IGBT en_US
dc.subject metal–oxide–semiconductor field-effect transistor en_US
dc.subject MOSFET en_US
dc.subject high-electron-mobility transistor en_US
dc.subject HEMT en_US
dc.subject heterojunction field effect transistor en_US
dc.subject HFET en_US
dc.subject field-effect transistor en_US
dc.subject FET en_US
dc.subject diamond power devices en_US
dc.subject dispozitive de alimentare pe bază de diamante en_US
dc.subject semiconductori en_US
dc.subject dispozitive electronice en_US
dc.title Future trends in power electronic devices en_US
dc.title.alternative Tendinţe viitoare în dezvoltarea dispozitivelor electronice de putere en_US
dc.type Article en_US


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