Особенности свойств гетеропереходов на структурных модификациях дифосфида цинка

Abstract

The charge transfer and photoeffect in the heterojunction formed by the epytaxial growing of the one structure modification of the ZnP2 on the other are investigated. It was stated that the transitive processes on the interface of the region of space charge and the phase of heterojunction α (n) – β (p) – ZnP2 influence the definitive action on the spectral and temperature characteristics of the structure. It was shown that the composition of the domains of the space charge of the junction corresponds to the α and β phases of ZnP2, which form the heterojunction. On the interface of these phases the layer of low conductivity was observed which affects the heterojunction characteristics.