Procesul termic de aliere a straturilor epitaxiale de arseniură de galiu cu comandă automată

Abstract

The automatic control system for thermal alloying process of GaAs epilayers growth by transport reaction in Ga-AsCl3-H2 system is reported. The control system was built on universal two-channels programmable PID-regulator TRM15-01 bases, which permits automatic control of complicated objects with high precision. The experimental technologist’s program contains steps of p+ - po – n+ photovoltaic structures achievement with damper layer on p-GaAs substrate. Utilizing the change steps the technologist has the possibility to obtain multiple periodical epitaxial layers structures with different dimensions and electrophysical properties, including nano-dimension structures. This control system minimizes the new technologies elaboration terms, accelerates the implantation of the elaborated technology in industry by diminishing production costs, increasing the product quality and his market competitiveness.