Chalcogenide materials for emerging memories

dc.contributor.author	VELEA, A.
dc.date.accessioned	2019-11-05T12:34:13Z
dc.date.available	2019-11-05T12:34:13Z
dc.date.issued	2019
dc.identifier.citation	VELEA, A. Chalcogenide materials for emerging memories. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June - 4 July, 2019. Chişinău, 2019, pp. 5-6.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/6106
dc.description	Abstract	en_US
dc.description.abstract	Emerging resistive switching (RS) non-volatile memory (NVM) technologies, such as resistive random access memory (RRAM) or phase change memory (PCM), are promising candidates for the next generation of advanced data storage applications. They have a number of advantages, such as scalability, non-volatility, high switching speed, energy efficiency and ease of fabrication, that could overcome the limitations of current memory technologies.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	resistive switching	en_US
dc.subject	non-volatile memory	en_US
dc.subject	resistive random access memory	en_US
dc.subject	phase change memory	en_US
dc.subject	chalcogenide materials	en_US
dc.subject	data storage applications	en_US
dc.title	Chalcogenide materials for emerging memories	en_US
dc.type	Article	en_US