dc.contributor.author | TURMANOVA, K. | |
dc.contributor.author | ZHAKYPOV, A. | |
dc.contributor.author | PRIKHODKO, O. | |
dc.contributor.author | TOLEPOV, Z. | |
dc.contributor.author | KOZYUKHIN, S. | |
dc.contributor.author | ISMAILOVA, G. | |
dc.contributor.author | MAKSIMOVA, S. | |
dc.date.accessioned | 2019-11-04T15:06:23Z | |
dc.date.available | 2019-11-04T15:06:23Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | TURMANOVA, K., ZHAKYPOV, A., PRIKHODKO, O., TOLEPOV, Z., KOZYUKHIN, S., ISMAILOVA, G., MAKSIMOVA, S. Structure of nanosized Ge2Sb2Te5 films with silver impurity. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 61-62. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/6027 | |
dc.description | Abstract | en_US |
dc.description.abstract | The paper presents the results of studying the structure of nanosized films Ge2Sb2Te5 with silver impurity (Ge2Sb2Te5<Ag>). The films were obtained by the method of ion-plasma highfrequency magnetron sputtering. Upon receipt of the films, a combined target was used, consisting of the composition Ge2Sb2Te5 of AciAlloys (USA) and Ag. The composition of the films was controlled by energy-dispersion analysis (EDXA) on the SEM Quanta 3D 200i. The film thickness was determined by scanning on SEM cleavage of c-Si / Ge2Sb2Te5 <Ag> film and ranged from ~ 50 to ~ 100 nm. The concentration of silver impurities in the Ge2Sb2Te5 <Ag> films reached 12.3 at.%. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | nanosized films Ge2Sb2Te5 | en_US |
dc.subject | silver impurity (Ge2Sb2Te5<Ag>) | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.title | Structure of nanosized Ge2Sb2Te5 films with silver impurity | en_US |
dc.type | Article | en_US |
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