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Structure of nanosized Ge2Sb2Te5 films with silver impurity

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dc.contributor.author TURMANOVA, K.
dc.contributor.author ZHAKYPOV, A.
dc.contributor.author PRIKHODKO, O.
dc.contributor.author TOLEPOV, Z.
dc.contributor.author KOZYUKHIN, S.
dc.contributor.author ISMAILOVA, G.
dc.contributor.author MAKSIMOVA, S.
dc.date.accessioned 2019-11-04T15:06:23Z
dc.date.available 2019-11-04T15:06:23Z
dc.date.issued 2019
dc.identifier.citation TURMANOVA, K., ZHAKYPOV, A., PRIKHODKO, O., TOLEPOV, Z., KOZYUKHIN, S., ISMAILOVA, G., MAKSIMOVA, S. Structure of nanosized Ge2Sb2Te5 films with silver impurity. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 61-62. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/6027
dc.description Abstract en_US
dc.description.abstract The paper presents the results of studying the structure of nanosized films Ge2Sb2Te5 with silver impurity (Ge2Sb2Te5<Ag>). The films were obtained by the method of ion-plasma highfrequency magnetron sputtering. Upon receipt of the films, a combined target was used, consisting of the composition Ge2Sb2Te5 of AciAlloys (USA) and Ag. The composition of the films was controlled by energy-dispersion analysis (EDXA) on the SEM Quanta 3D 200i. The film thickness was determined by scanning on SEM cleavage of c-Si / Ge2Sb2Te5 <Ag> film and ranged from ~ 50 to ~ 100 nm. The concentration of silver impurities in the Ge2Sb2Te5 <Ag> films reached 12.3 at.%. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanosized films Ge2Sb2Te5 en_US
dc.subject silver impurity (Ge2Sb2Te5<Ag>) en_US
dc.subject Raman spectroscopy en_US
dc.title Structure of nanosized Ge2Sb2Te5 films with silver impurity en_US
dc.type Article en_US


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