dc.contributor.author | BILOVOL, V. | |
dc.contributor.author | ROCCA, J. | |
dc.contributor.author | FONTANA, M. | |
dc.contributor.author | UREÑA, M. A. | |
dc.date.accessioned | 2019-11-04T14:19:12Z | |
dc.date.available | 2019-11-04T14:19:12Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | BILOVOL, V., ROCCA, J., FONTANA, M., UREÑA, M. A. Evidence of SnSb2Te4 rocksalt metastable phase of thin films grown by pulsed laser deposition. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, p. 56. | en_US |
dc.identifier.uri | http://repository.utm.md/handle/5014/6019 | |
dc.description | Abstract | en_US |
dc.description.abstract | SnSb2Te4, an intermetallic compounds in the pseudobinary SnTe-Sb2Te3, looks as a promising candidate for phase-change material in non-volatile memories applications. Thin films having thickness from 50 to 150 nm were grown by pulsed laser deposition using SnSb2Te4 as structure of 21 R-type structure (R-3m) consisting of rocksalt-type blocks separated by van der target. While in thermal equilibrium this phase crystallizes into a complex cubic close-packed Waals gaps [1], the thin films obtained had a simple NaCl-structure (Fm-3m) (metastable phase) as it was deduced from conventional XRD measurements in grazing incidence of the investigated films. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | crystal structure | en_US |
dc.subject | thin films | en_US |
dc.subject | metastable phase | en_US |
dc.title | Evidence of SnSb2Te4 rocksalt metastable phase of thin films grown by pulsed laser deposition | en_US |
dc.type | Article | en_US |
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