Multiple switching effects in GeSbTe thin-films

dc.contributor.author	FEFELOV, S.
dc.contributor.author	KAZAKOVA, L.
dc.contributor.author	BOGOSLOVSKIY, N.
dc.contributor.author	LAZARENKO, P.
dc.date.accessioned	2019-11-02T12:26:15Z
dc.date.available	2019-11-02T12:26:15Z
dc.date.issued	2019
dc.identifier.citation	FEFELOV, S., KAZAKOVA, L., BOGOSLOVSKIY, N., LAZARENKO, P. Multiple switching effects in GeSbTe thin-films. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 29.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5910
dc.description	Abstract	en_US
dc.description.abstract	The switching and memory effects in chalcogenide glassy semiconductors are actively studied both experimentally and theoretically during the last years. Possible mechanisms of these effects are widely discussed. In this paper, we present an experimental study of switching and memory effects by an original method with a current generator. In order to measure the I-V curve, triangular current pulses are applied to the sample and the voltage on the sample is measured.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	switching	en_US
dc.subject	current generator	en_US
dc.subject	semiconductors	en_US
dc.title	Multiple switching effects in GeSbTe thin-films	en_US
dc.type	Article	en_US