Problems of the development of high frequency amplifiers and one of methods of their solution

dc.contributor.author	MITITEL, V. V.
dc.date.accessioned	2019-10-30T12:01:56Z
dc.date.available	2019-10-30T12:01:56Z
dc.date.issued	2005
dc.identifier.citation	MITITEL, V. V. Problems of the development of high frequency amplifiers and one of methods of their solution. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 2, pp. 440-442. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/5686
dc.description.abstract	Problems of the development of high frequency amplifiers begin when we attempt to reach frequency 30MHz and above. They exist because of presence of input capacitance in the amplifying element. There is no element with the zero capacitance. When frequency is growing up, reactance is coming down. It decreases input and output signals respectively. Until now as an amplifying element we used a bipolar transistor. When we have started using FET transistor many problems have been solved.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	high frequency amplifiers	en_US
dc.subject	frequency amplifiers	en_US
dc.subject	amplifiers	en_US
dc.title	Problems of the development of high frequency amplifiers and one of methods of their solution	en_US
dc.type	Article	en_US