Electrophysical properties of nanometric CdS layers deposited by pulverization method

Abstract

The objective of this paper is establishing of the optimum conditions for CdS layers deposition by pulverization method on glass substrates coated with a previously deposited tampon SnO2 layer, studies of their electrical and luminescence properties in dependence on the deposition temperaturein an argon flux and on the annealing in a hydrogen flux. CdS layers were grown from aqueons solutions of cadmium chlorine (CdCl2) and thyourea (NH2)2 CS with the molarity of 0,1M by pulverization method in the temperature range of (250...450) oC. CdS layers were grown on glass substrates covered with a previously deposited SnO2 layer. Electrophysical properties and photoluminescence of these layers were studied. For the layers deposited at 450 oC a slight decrease of charge carrier concentration is observed with the increase of treatment temperature up to 450 oC. The photoluminescence spectrum consists of a large band in the energy interval from 1,6 eV to 2,6 eV. A photoluminescence peak with the energy of 1,95 eV is observed, which is shifting with CdS layer growth temperature increase and it reach the value of 2,5 eV for the layers grown at the temperature of 450 oC.