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Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser

Show simple item record FORSH, Pavel EMELYANOV, Andrey KAZANSKII, Andrey KHENKIN, Mark ZABOTNOV, Stanislav KASHKAROV, Pavel GECEVICIUS, Mindaugas BERESNA, Martynas KAZANSKY, Peter 2019-10-25T15:27:16Z 2019-10-25T15:27:16Z 2013
dc.identifier.citation FORSH, Pavel, EMELYANOV, Andrey, KAZANSKII, Andrey, KHENKIN, Mark, ZABOTNOV, Stanislav, KASHKAROV, Pavel, GECEVICIUS, Mindaugas, BERESNA, Martynas, KAZANSKY, Peter. Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 294-297. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-8
dc.description.abstract In the present work we report investigations of structural and photoluminescence properties of hydrogenated amorphous silicon (a-Si:H) films irradiated by femtosecond laser pulses. We observed that femtosecond laser irradiation provided non-uniform a-Si:H structure modification. Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystals produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri *
dc.subject amorphous silicon en_US
dc.subject defect photoluminescence en_US
dc.subject femtosecond laser processing en_US
dc.title Down-Shifter luminescent features engineering in amorphous silicon by femtosecond laser en_US
dc.type Article en_US

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