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Electrical properties of rapidly solidified of heavily doped alloys (Bi91 - Sb9)100-x Snx

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dc.contributor.author SHEPELEVICH, V.G.
dc.contributor.author PROKOSHIN, V.I.
dc.date.accessioned 2019-10-21T14:29:09Z
dc.date.available 2019-10-21T14:29:09Z
dc.date.issued 2014
dc.identifier.citation SHEPELEVICH, V.G., PROKOSHIN, V.I. Electrical properties of rapidly solidified of heavily doped alloys (Bi91 - Sb9)100-x Snx. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 129-131. ISBN 978-9975-45-329-5. en_US
dc.identifier.isbn 978-9975-45-329-5
dc.identifier.uri http://repository.utm.md/handle/5014/4959
dc.description.abstract We report the measurement of microstructure and transport properties in pure Bi91Sb9 and heavily doped with Sn (0.8at%, 1.2at%, 2.4at%) foils prepared by the high velocity crystallization ≈ 5·105 K/s. The foil thickness was 30-100 μm. It is shown that the rapidly solidified alloys (Bi91-Sb9)100-xSnx has a microcrystalline structure and contains the dispersed tin particles. Their average size increases with increasing concentration of tin in the alloys and does not exceed 0.3 μm. The rapidly solidified foils have a microcrystalline structure and texture (1012). It is shown that the electrophysical properties of the alloys (Bi91 -Sb9)100-xSnx (x = 0,8 - 2,0) are determined mainly by holes. The foils are characterized by a high positive Peltier coefficient value and can be used for manufacturing the thermoelectric devices, working at the temperatures below room temperature. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thermoelectricity en_US
dc.subject foils en_US
dc.subject semiconductor alloys en_US
dc.subject high velocity crystallization en_US
dc.title Electrical properties of rapidly solidified of heavily doped alloys (Bi91 - Sb9)100-x Snx en_US
dc.type Article en_US


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