Materials for Integrated of THz sensors in EWOD chips

SIRBU, Lilian; MULLER, Raluca; DANILA, Mihai; SCHIOPU, Vasilica; MATEI, Alina; COMANESCU, Florin; STEFAN, Angela; BARACU, Angela; DASCALU, Traian

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dc.contributor.author	SIRBU, Lilian
dc.contributor.author	MULLER, Raluca
dc.contributor.author	DANILA, Mihai
dc.contributor.author	SCHIOPU, Vasilica
dc.contributor.author	MATEI, Alina
dc.contributor.author	COMANESCU, Florin
dc.contributor.author	STEFAN, Angela
dc.contributor.author	BARACU, Angela
dc.contributor.author	DASCALU, Traian
dc.date.accessioned	2019-10-21T13:14:39Z
dc.date.available	2019-10-21T13:14:39Z
dc.date.issued	2014
dc.identifier.citation	SIRBU, Lilian, MULLER, Raluca, DANILA, Mihai, SCHIOPU, Vasilica, MATEI, Alina, COMANESCU, Florin, STEFAN, Angela, BARACU, Angela, DASCALU, Traian. Materials for Integrated of THz sensors in EWOD chips. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 102-105. ISBN 978-9975-45-329-5.	en_US
dc.identifier.isbn	978-9975-45-329-5
dc.identifier.uri	http://repository.utm.md/handle/5014/4951
dc.description.abstract	We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50–100oC), under constant argon pressure (6.3•10-3 Bar) and RF power (40-100 W).	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	InP film	en_US
dc.subject	LT-InP	en_US
dc.subject	terahertz (THz) spectroscopy	en_US
dc.subject	THz-TDS	en_US
dc.title	Materials for Integrated of THz sensors in EWOD chips	en_US
dc.type	Article	en_US