Silicon nanocluster in silicon dioxide

Abstract

Cathodoluminescence spectra of silicate systems, have two well-known bands associated with native SiO2 defects, namely, a red one peaking at 1.9 eV (twofold-coordinated silicon). The position and intensity of these bands in thermally grown films vary depending on the silicon type and the technology of the film preparation. The bands are the strongest for films grown on p silicon. A layer - by - layer analysis of thermal oxide films on p silicon showed that the band in green spectral region appears on the interface and on the adjoining oxide layers 0.1-0.2 um thick. To establish the nature of the centers responsible for the green bands, we studied cathodoluminescence spectra of various silicate systems.