The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals

CARAMAN, Mihail; EVTODIEV, Igor; CUCULESCU, Elmira

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dc.contributor.author	CARAMAN, Mihail
dc.contributor.author	EVTODIEV, Igor
dc.contributor.author	CUCULESCU, Elmira
dc.date.accessioned	2019-10-21T07:05:39Z
dc.date.available	2019-10-21T07:05:39Z
dc.date.issued	2005
dc.identifier.citation	CARAMAN, Mihail, EVTODIEV, Igor, CUCULESCU, Elmira. The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 157-161. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4890
dc.description.abstract	By studying PL spectra, as well photonductivity kinetics and spectral dependences, for different excitation (photon) energies in temperature range 78 K up to ~420 K, energies of localized states due to both Cu and noncontrollable impurities are determined. From comparative annalyse of temperature dependence of electrical conductivity and photoconductivity for undoped and Cu-doped films, the activation energy of acceptor levels was determined as 0.058 and 0.025 eV for GaSe(Cu) films.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	photoluminescence	en_US
dc.subject	photoconduction	en_US
dc.subject	single crystals	en_US
dc.title	The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals	en_US
dc.type	Article	en_US