Metal– semiconductor and HTSC – semiconductor contacts for diode detectors

dc.contributor.author	KERNER, Iacov
dc.date.accessioned	2019-10-21T06:43:52Z
dc.date.available	2019-10-21T06:43:52Z
dc.date.issued	2005
dc.identifier.citation	KERNER, Iacov. Metal– semiconductor and HTSC – semiconductor contacts for diode detectors. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 149-152. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4888
dc.description.abstract	The numerical modeling of the electrical potential distribution and current passing in the contacts of the high temperature superconductor with semiconductor InSb had been made. There were analyzed the possibilities to create the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4 K. The comparison with existent literature data shows the proposed DD can be 10÷100 times better. Therefore these DD are perspective for cryogenic electronics and there is an actual problem to elaborate them.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	superconductivity	en_US
dc.subject	Schottky diodes	en_US
dc.subject	diodes	en_US
dc.subject	semiconductor contacts	en_US
dc.title	Metal– semiconductor and HTSC – semiconductor contacts for diode detectors	en_US
dc.type	Article	en_US