Arsenic (III) oxide crystal obtained from technological waste: photoluminescence

BARANOV, Simion; REDWING, Joan; CINIC, Boris

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dc.contributor.author	BARANOV, Simion
dc.contributor.author	REDWING, Joan
dc.contributor.author	CINIC, Boris
dc.date.accessioned	2019-10-18T12:42:50Z
dc.date.available	2019-10-18T12:42:50Z
dc.date.issued	2005
dc.identifier.citation	TSIULYANU, I., SIMASHKEVICH, A., COJOCARU, A. The photoelectrical properties of bilateral photoelectrochemical cell with nGaAs photo-electrode. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 113-116. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4859
dc.description.abstract	Arsenic (III) oxide was obtained from vapor stream at processing technological waste in manufacturing of the gallium arsenide epitaxial structure. It has a cubic crystal structure, elementary cell a=11.05(4)Ǻ, Fd3m space group. The photoluminescence spectra of the arsenic oxide contains a band with the maximum 2.69 eV that doesn’t depend on temperature in the interval 77-300 K. The width of the band is 0.75 eV. The intensity of illumination with energies lower than 2.32 eV at 77 K is higher. Perhaps it can be utilized in opto electronic device designing.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	arsenic oxide crystals	en_US
dc.subject	technological wastes	en_US
dc.subject	photoluminescence	en_US
dc.title	Arsenic (III) oxide crystal obtained from technological waste: photoluminescence	en_US
dc.type	Article	en_US